资源类型

期刊论文 62

年份

2023 7

2022 4

2021 6

2020 2

2019 4

2018 3

2017 11

2015 5

2014 1

2013 2

2011 1

2010 1

2009 1

2008 2

2007 5

2006 1

2005 1

2004 1

2002 1

2000 3

展开 ︾

关键词

多晶硅 3

晶体硅太阳电池 2

AD9954 1

TRIP钢 1

n-Si 1

三元乙丙橡胶 1

三氣氢硅法 1

中性原子量子计算 1

串联内阻 1

乳液共聚合 1

位错增殖 1

低硅 1

体硅键合技术 1

偕胺肟型螯合树脂 1

光伏/光电化学器件 1

光量子计算 1

光阳极 1

分布式量子计算 1

制备工艺 1

展开 ︾

检索范围：

排序： 展示方式：

Influence of using amorphous silicon stack as front heterojunction structure on performance of interdigitated

Rui JIA,Ke TAO,Qiang LI,Xiaowan DAI,Hengchao SUN,Yun SUN,Zhi JIN,Xinyu LIU

《能源前沿（英文）》 2017年 第11卷 第1期   页码 96-104 doi: 10.1007/s11708-016-0434-6

摘要： Interdigitated back contact-heterojunction (IBC-HJ) solar cells can have a conversion efficiency of over 25%. However, the front surface passivation and structure have a great influence on the properties of the IBC-HJ solar cell. In this paper, detailed numerical simulations have been performed to investigate the potential of front surface field (FSF) offered by stack of n-type doped and intrinsic amorphous silicon (a-Si) layers on the front surface of IBC-HJ solar cells. Simulations results clearly indicate that the electric field of FSF should be strong enough to repel minority carries and cumulate major carriers near the front surface. However, the over-strong electric field tends to drive electrons into a-Si layer, leading to severe recombination loss. The n-type doped amorphous silicon (n-a-Si) layer has been optimized in terms of doping level and thickness. The optimized intrinsic amorphous silicon (i-a-Si) layer should be as thin as possible with an energy band gap ( ) larger than 1.4 eV. In addition, the simulations concerning interface defects strongly suggest that FSF is essential when the front surface is not passivated perfectly. Without FSF, the IBC-HJ solar cells may become more sensitive to interface defect density.

关键词： amorphous silicon     front surface field     simulations     interdigitated back contact-heterojunction solar cells    

HTML PDF 收藏

Ultrathin microcrystalline hydrogenated Si/Ge alloyed tandem solar cells towards full solar spectrum conversion

Yu Cao, Xinyun Zhu, Xingyu Tong, Jing Zhou, Jian Ni, Jianjun Zhang, Jinbo Pang

《化学科学与工程前沿（英文）》 2020年 第14卷 第6期   页码 997-1005 doi: 10.1007/s11705-019-1906-0

摘要： Thin film solar cells have been proved the next generation photovoltaic devices due to their low cost, less material consumption and easy mass production. Among them, micro-crystalline Si and Ge based thin film solar cells have advantages of high efficiency and ultrathin absorber layers. Yet individual junction devices are limited in photoelectric conversion efficiency because of the restricted solar spectrum range for its specific absorber. In this work, we designed and simulated a multi-junction solar cell with its four sub-cells selectively absorbing the full solar spectrum including the ultraviolet, green, red as well as near infrared range, respectively. By tuning the Ge content, the record efficiency of 24.80% has been realized with the typical quadruple junction structure of a-Si:H/a-Si Ge :H/µc-Si:H/µc-Si Ge :H. To further reduce the material cost, thickness dependent device performances have been conducted. It can be found that the design of total thickness of 4 m is the optimal device design in balancing the thickness and the . While the design of ultrathin quadruple junction device with total thickness of 2 m is the optimized device design regarding cost and long-term stability with a little bit more reduction in . These results indicated that our solar cells combine the advantages of low cost and high stability. Our work may provide a general guidance rule of utilizing the full solar spectrum for developing high efficiency and ultrathin multi-junction solar cells.

关键词： thin films     solar cells     quadruple junction solar cell     amorphous silicon     silicon germanium alloy     quantum efficiency    

HTML PDF 收藏

Advances in chemical synthesis and application of metal-metalloid amorphous alloy nanoparticulate catalysts

WU Zhijie, LI Wei, ZHANG Minghui, TAO Keyi

《化学科学与工程前沿（英文）》 2007年 第1卷 第1期   页码 87-95 doi: 10.1007/s11705-007-0018-4

摘要： This paper reviews the advances in the chemical synthesis and application of metal-metalloid amorphous alloy nanoparticles consisting of transition metal (M) and metalloid elements (B, P). After a brief introduction on the history of amorphous alloy catalysts, the paper focuses on the properties and characterization of amorphous alloy catalysts, and recent developments in the solution-phase synthesis of amorphous alloy nanoparticles. This paper further outlines the applications of amorphous alloys, with special emphasis on the problems and strategies for the application of amorphous alloy nanoparticles in catalytic reactions.
HTML PDF 收藏

Effects of nano-silicon and common silicon on lead uptake and translocation in two rice cultivars

Jianguo LIU,Hui CAI,Congcong MEI,Mingxin WANG

《环境科学与工程前沿（英文）》 2015年 第9卷 第5期   页码 905-911 doi: 10.1007/s11783-015-0786-x

摘要： The current study investigated the effects of nano-silicon (Si) and common Si on lead (Pb) toxicity, uptake, translocation, and accumulation in the rice cultivars Yangdao 6 and Yu 44 grown in soil containing two different Pb levels (500 mg·kg and 1000 mg·kg ). The results showed that Si application alleviated the toxic effects of Pb on rice growth. Under soil Pb treatments of 500 and 1000 mg·kg , the biomasses of plants supplied with common Si and nano-Si were 1.8%–5.2% and 3.3%–11.8% higher, respectively, than those of plants with no Si supply (control). Compared to the control, Pb concentrations in rice shoots supplied with common Si and nano-Si were reduced by 14.3%–31.4% and 27.6%–54.0%, respectively. Pb concentrations in rice grains treated with common Si and nano-Si decreased by 21.3%–40.9% and 38.6%–64.8%, respectively. Pb translocation factors (TFs) from roots to shoots decreased by 15.0%–29.3% and 25.6%–50.8%, respectively. The TFs from shoots to grains reduced by 8.3%–13.7% and 15.3%–21.1%, respectively, after Si application. The magnitudes of the effects observed on plants decreased in the following order: nano-Si treatment>common Si treatment and high-grain-Pb-accumulating cultivar (Yangdao 6)>low-grain-Pb-accumulating cultivar (Yu 44) and heavy Pb stress (1000 mg·kg )>moderate Pb stress (500 mg·kg )>no Pb treatment. The results of the study indicate that nano-Si is more efficient than common Si in ameliorating the toxic effects of Pb on rice growth, preventing Pb transfer from rice roots to aboveground parts, and blocking Pb accumulation in rice grains, especially in high-Pb-accumulating rice cultivars and in heavily Pb-polluted soils.

关键词： silicon (Si)     lead (Pb)     rice (Oryza sativa L.)     toxicity     accumulation    

HTML PDF 收藏

Computer modeling of crystal growth of silicon for solar cells

Lijun LIU, Xin LIU, Zaoyang LI, Koichi KAKIMOTO

《能源前沿（英文）》 2011年 第5卷 第3期   页码 305-312 doi: 10.1007/s11708-011-0155-9

摘要： A computer simulator with a global model of heat transfer during crystal growth of Si for solar cells is developed. The convective, conductive, and radiative heat transfers in the furnace are solved together in a coupled manner using the finite volume method. A three-dimensional (3D) global heat transfer model with 3D features is especially made suitable for any crystal growth, while the requirement for computer resources is kept permissible for engineering applications. A structured/unstructured combined mesh scheme is proposed to improve the efficiency and accuracy of the simulation. A dynamic model for the melt-crystal (mc) interface is developed to predict the phase interface behavior in a crystal growth process. Dynamic models for impurities and precipitates are also incorporated into the simulator. Applications of the computer simulator to Czochralski (CZ) growth processes and directional solidification processes of Si crystals for solar cells are introduced. Some typical results, including the turbulent melt flow in a large-scale crucible of a CZ-Si process, the dynamic behaviors of the mc interface, and the transport and distributions of impurities and precipitates, such as oxygen, carbon, and SiC particles, are presented and discussed. The findings show the importance of computer modeling as an effective tool in the analysis and improvement of crystal growth processes and furnace designs for solar Si material.

关键词： computer modeling     silicon     crystal growth     solar cells    

HTML PDF 收藏

Thermodynamic study on dynamic water and organic vapor sorption on amorphous valnemulin hydrochloride

Jinbo OUYANG, Jingkang WANG, Yongli WANG, Qiuxiang YIN, Hongxun HAO

《化学科学与工程前沿（英文）》 2015年 第9卷 第1期   页码 94-104 doi: 10.1007/s11705-015-1460-3

摘要： The sorption of water and organic vapors on valnemulin hydrochloride was determined by dynamic vapor sorption at 25 °C. The adsorption-desorption behavior of water vapor and a series of organic vapors was investigated to probe the structural changes in valnemulin hydrochloride before and after sorption. The isothermal adsorption equilibrium data was evaluated using Guggenheim-Anderson-deBoer (GAB) and Brunauer-Emmett-Teller (BET) models. The BET model is applicable only at low relative pressures (0.1≤RP≤0.4) while the GAB model is applicable in the whole range of RPs (0.1≤RP≤0.9). The sorption kinetics at high RPs was determined by fitting the sorption data to the Avrami equation and the sorption content time relationship could be predicted by the Avrami equation. Finally, the possible sorption mechanism of valnemulin hydrochloride was also discussed.

关键词： valnemulin hydrochloride     water vapor     organic vapors     sorption     kinetics    

HTML PDF 收藏

Atomistic understanding of interfacial processing mechanism of silicon in water environment: A ReaxFF

《机械工程前沿（英文）》 2021年 第16卷 第3期   页码 570-579 doi: 10.1007/s11465-021-0642-6

摘要： The interfacial wear between silicon and amorphous silica in water environment is critical in numerous applications. However, the understanding regarding the micro dynamic process is still unclear due to the limitations of apparatus. Herein, reactive force field simulations are utilized to study the interfacial process between silicon and amorphous silica in water environment, exploring the removal and damage mechanism caused by pressure, velocity, and humidity. Moreover, the reasons for high removal rate under high pressure and high velocity are elucidated from an atomic perspective. Simulation results show that the substrate is highly passivated under high humidity, and the passivation layer could alleviate the contact between the abrasive and the substrate, thus reducing the damage and wear. In addition to more Si-O-Si bridge bonds formed between the abrasive and the substrate, new removal pathways such as multibridge bonds and chain removal appear under high pressure, which cause higher removal rate and severer damage. At a higher velocity, the abrasive can induce extended tribochemical reactions and form more interfacial Si-O-Si bridge bonds, hence increasing removal rate. These results reveal the internal cause of the discrepancy in damage and removal rate under different conditions from an atomic level.

关键词： silicon     ReaxFF     molecular dynamics     friction     damage    

HTML PDF 收藏

Effect of extrusion temperature on the physical properties of high-silicon aluminum alloy

YANG Fuliang, GAN Weiping, CHEN Zhaoke

《机械工程前沿（英文）》 2007年 第2卷 第1期   页码 120-124 doi: 10.1007/s11465-007-0021-y

摘要： Light-weight high-silicon aluminum alloys are used for electronic packaging in the aviation and space-flight industry. Al-30Si and Al-40Si are fabricated with air-atomization and vacuum-canning hot-extrusion process. The density, thermal conductivity, hermeticity and thermal expansion coefficients of the material are measured, and the relationship between extrusion temperature and properties is obtained. Experimental results show that the density of high-silicon aluminum alloys prepared with this method is as high as 99.64% of the theory density, and increases with elevating extrusion temperature. At the same time, thermal conductivity varies between 104-140 W/(m " K); with the extrusion temperature, thermal expansion coefficient also increases but within 13?10 (at 100?C) and hermeticity of the material is high to 10 order of magnitude.

关键词： coefficient     hermeticity     temperature     relationship     air-atomization    

HTML PDF 收藏

硅及硅基半导体材料中杂质缺陷和表面的研究

屠海令

《中国工程科学》 2000年 第2卷 第1期   页码 7-17

摘要：

随着超大规模集成电路设计线宽向深亚微米级（＜0.5μm）和亚四分之一微米级（＜0.25μm）发展，对半导体硅片及其它硅基材料的质量要求越来越高，研究上述材料中各种杂质的行为，控制缺陷类型及数量，提高晶体完整性，降低表面污染和采用缺陷工程的方法改善材料质量显得尤为重要。文章阐述了深亚微米级和亚四分之一微米级集成电路用大直径硅材料中铁、铜金属和氧、氢、氮非金属杂质元素的行为，点缺陷及其衍生缺陷的本质与控制方法，硅片表面形貌、表面污染与检测方法的研究热点。同时还介绍了外延硅、锗硅及绝缘体上硅（SOI）等硅基材料的特性、制备及工艺技术发展趋势，展望了跨世纪期间硅及硅基材料产业发展的技术经济前景。

关键词： 硅片     硅外延片     锗硅     绝缘体上硅     杂质行为     缺陷控制     表面质量    

HTML PDF 收藏

Hydrogenation of furfuryl alcohol to tetrahydrofurfuryl alcohol on NiB/SiO2 amorphous alloy catalyst

SONG Yun, LI Wei, ZHANG Minghui, TAO Keyi

《化学科学与工程前沿（英文）》 2007年 第1卷 第2期   页码 151-154 doi: 10.1007/s11705-007-0028-2

摘要： NiB/SiO amorphous alloy catalyst was prepared by power electroless plating method and characterized by induction coupled plasma (ICP), Brunauer Emmett Teller method (BET), transmission electron microscope (TEM) and X-ray diffraction (XRD) techniques. The catalytic performance of NiB/SiO was investigated for the hydrogenation of furfuryl alcohol (FA) to tetrahydrofurfuryl alcohol (THFA). The effects of operational conditions, such as reaction temperature, pressure, and stirring rate were carefully studied. The proper conditions were determined as the following: pressure 2.0 MPa, temperature 120?C and stirring rate 550 r/min. A typical result with FA conversion of 99% and THFA selectivity of 100% was obtained under such conditions, which was close to that over Raney Ni.

关键词： following     Brunauer     electroless     temperature     transmission    

HTML PDF 收藏

>In situ growth of phosphorized ZIF-67-derived amorphous CoP/Cu2O@CF electrocatalyst

《化学科学与工程前沿（英文）》 2023年 第17卷 第10期   页码 1430-1439 doi: 10.1007/s11705-023-2320-1

摘要： Transition metal phosphides have been extensively studied for catalytic applications in water splitting. Herein, we report an in situ phosphorization of zeolitic imidazole frameworks (ZIF-67) to generate amorphous cobalt phosphide/ZIF-67 heterojunction on a self-supporting copper foam (CF) substrate with excellent performance for hydrogen evolution reaction (HER). The needle-leaf like copper hydroxide was anchored on CF surface, which acted as implantation to grow ZIF-67. The intermediate product was phosphorized to obtain final electrocatalyst (CoP/Cu2O@CF) with uniform particle size, exhibiting a rhombic dodecahedron structure with wrinkles on the surface. The electrochemical measurement proved that CoP/Cu2O@CF catalyst exhibited excellent HER activity and long-term stability in 1.0 mol·L–1 KOH solution. The overpotential was only 62 mV with the Tafel slope of 83 mV·dec–1 at a current density of 10 mA·cm–2, with a large electrochemical active surface area. It also showed competitive performance at large current which indicated the potential application to industrial water electrolysis to produce hydrogen. First-principle calculations illustrated that benefit from the construction of CoP/ZIF-67 heterojunction, the d-band center of CoP downshifted after bonding with ZIF-67 and the Gibbs free energy (ΔGH*) changed from –0.18 to –0.11 eV, confirming both decrease in overpotential and excellent HER activity. This work illustrates the efficient HER activity of CoP/Cu2O@CF catalyst, which will act as a potential candidate for precious metal electrocatalysts.

关键词： CoP/Cu2O@CF     electrocatalyst     phosphorization     HER     DFT    

HTML PDF 收藏

Laser enhanced gettering of silicon substrates

Daniel CHEN,Matthew EDWARDS,Stuart WENHAM,Malcolm ABBOTT,Brett HALLAM

《能源前沿（英文）》 2017年 第11卷 第1期   页码 23-31 doi: 10.1007/s11708-016-0441-7

摘要： One challenge to the use of lightly-doped, high efficiency emitters on multicrystalline silicon wafers is the poor gettering efficiency of the diffusion processes used to fabricate them. With the photovoltaic industry highly reliant on heavily doped phosphorus diffusions as a source of gettering, the transition to selective emitter structures would require new alternative methods of impurity extraction. In this paper, a novel laser based method for gettering is investigated for its impact on commercially available silicon wafers used in the manufacturing of solar cells. Direct comparisons between laser enhanced gettering (LasEG) and lightly-doped emitter diffusion gettering demonstrate a 45% absolute improvement in bulk minority carrier lifetime when using the laser process. Although grain boundaries can be effective gettering sites in multicrystalline wafers, laser processing can substantially improve the performance of both grain boundary sites and intra-grain regions. This improvement is correlated with a factor of 6 further decrease in interstitial iron concentrations. The removal of such impurities from multicrystalline wafers using the laser process can result in intra-grain enhancements in implied open-circuit voltage of up to 40 mV. In instances where specific dopant profiles are required for a diffusion on one surface of a solar cell, and the diffusion process does not enable effective gettering, LasEG may enable improved gettering during the diffusion process.

关键词： gettering     multicystaline     silicon     impurities     laser doping    

HTML PDF 收藏

Special issue: Technologies for future high-efficiency industrial silicon wafer solar cells

《能源前沿（英文）》 2017年 第11卷 第1期   页码 1-3 doi: 10.1007/s11708-016-0436-4

HTML PDF 收藏

Erratum to: Enhancing the photoelectrochemical performance of p-silicon through TiO coating decorated

《能源前沿（英文）》 2022年 第16卷 第5期   页码 876-877 doi: 10.1007/s11708-022-0832-x

HTML PDF 收藏

Effects of taping on grinding quality of silicon wafers in backgrinding

Zhigang DONG, Qian ZHANG, Haijun LIU, Renke KANG, Shang GAO

《机械工程前沿（英文）》 2021年 第16卷 第3期   页码 559-569 doi: 10.1007/s11465-020-0624-0

摘要： Taping is often used to protect patterned wafers and reduce fragmentation during backgrinding of silicon wafers. Grinding experiments using coarse and fine resin-bond diamond grinding wheels were performed on silicon wafers with tapes of different thicknesses to investigate the effects of taping on peak-to-valley (PV), surface roughness, and subsurface damage of silicon wafers after grinding. Results showed that taping in backgrinding could provide effective protection for ground wafers from breakage. However, the PV value, surface roughness, and subsurface damage of silicon wafers with taping deteriorated compared with those without taping although the deterioration extents were very limited. The PV value of silicon wafers with taping decreased with increasing mesh size of the grinding wheel and the final thickness. The surface roughness and subsurface damage of silicon wafers with taping decreased with increasing mesh size of grinding wheel but was not affected by removal thickness. We hope the experimental finding could help fully understand the role of taping in backgrinding.

关键词： taping     silicon wafer     backgrinding     subsurface damage     surface roughness    

HTML PDF 收藏

标题 作者 时间 类型 操作

Influence of using amorphous silicon stack as front heterojunction structure on performance of interdigitated

Rui JIA,Ke TAO,Qiang LI,Xiaowan DAI,Hengchao SUN,Yun SUN,Zhi JIN,Xinyu LIU

期刊论文

Ultrathin microcrystalline hydrogenated Si/Ge alloyed tandem solar cells towards full solar spectrum conversion

Yu Cao, Xinyun Zhu, Xingyu Tong, Jing Zhou, Jian Ni, Jianjun Zhang, Jinbo Pang

期刊论文

Advances in chemical synthesis and application of metal-metalloid amorphous alloy nanoparticulate catalysts

WU Zhijie, LI Wei, ZHANG Minghui, TAO Keyi

期刊论文

Effects of nano-silicon and common silicon on lead uptake and translocation in two rice cultivars

Jianguo LIU,Hui CAI,Congcong MEI,Mingxin WANG

期刊论文

Computer modeling of crystal growth of silicon for solar cells

Lijun LIU, Xin LIU, Zaoyang LI, Koichi KAKIMOTO

期刊论文

Thermodynamic study on dynamic water and organic vapor sorption on amorphous valnemulin hydrochloride

Jinbo OUYANG, Jingkang WANG, Yongli WANG, Qiuxiang YIN, Hongxun HAO

期刊论文

Atomistic understanding of interfacial processing mechanism of silicon in water environment: A ReaxFF

期刊论文

Effect of extrusion temperature on the physical properties of high-silicon aluminum alloy

YANG Fuliang, GAN Weiping, CHEN Zhaoke

期刊论文

硅及硅基半导体材料中杂质缺陷和表面的研究

屠海令

期刊论文

Hydrogenation of furfuryl alcohol to tetrahydrofurfuryl alcohol on NiB/SiO2 amorphous alloy catalyst

SONG Yun, LI Wei, ZHANG Minghui, TAO Keyi

期刊论文

>In situ growth of phosphorized ZIF-67-derived amorphous CoP/Cu2O@CF electrocatalyst

期刊论文

Laser enhanced gettering of silicon substrates

Daniel CHEN,Matthew EDWARDS,Stuart WENHAM,Malcolm ABBOTT,Brett HALLAM

期刊论文

Special issue: Technologies for future high-efficiency industrial silicon wafer solar cells

期刊论文

Erratum to: Enhancing the photoelectrochemical performance of p-silicon through TiO coating decorated

期刊论文

Effects of taping on grinding quality of silicon wafers in backgrinding

Zhigang DONG, Qian ZHANG, Haijun LIU, Renke KANG, Shang GAO

期刊论文